DocumentCode :
505713
Title :
40-Gbps direct modulation of 1.55-µm AlGaInAs semi-insulating buried-heterostructure distributed reflector lasers up to 85°C
Author :
Uetake, A. ; Otsubo, K. ; Matsuda, M. ; Okumura, S. ; Ekawa, M. ; Yamamoto, T.
Author_Institution :
Optoelectron. Ind. & Technol. Dev. Assoc. (OITDA), Tokyo, Japan
fYear :
2009
fDate :
4-8 Oct. 2009
Firstpage :
839
Lastpage :
840
Abstract :
1.55-mum AlGaInAs semi-insulating buried-heterostructure distributed reflector lasers with 75-mum-long active region achieved very high slope values of relaxation oscillation frequency of 4.5 (25degC) and 3.5 GHz/mA1/2 (85degC), which realized 40-Gbps direct modulation up to 85degC.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; optical modulation; quantum well lasers; AlGaInAs; bit rate 40 Gbit/s; direct modulation; distributed reflector lasers; quantum well lasers; relaxation oscillation frequency; semi-insulating buried-heterostructure; temperature 25 degC; temperature 85 degC; wavelength 1.55 mum; Coatings; Frequency; Laboratories; Laser feedback; Power generation; Power lasers; Quantum well devices; Temperature; Threshold current; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location :
Belek-Antalya
ISSN :
1092-8081
Print_ISBN :
978-1-4244-3680-4
Electronic_ISBN :
1092-8081
Type :
conf
DOI :
10.1109/LEOS.2009.5343421
Filename :
5343421
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=505713
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