Title :
High fundamental mode power, high speed InAlGaAs/AlGaAs 1310 and 1550-nm wafer-fused VCSELs
Author :
Sirbu, A. ; Mereuta, A. ; Caliman, A. ; Iakovlev, V. ; Suruceanu, G. ; Kapon, E.
Author_Institution :
Swiss Fed. Inst. of Technol., EPFL, Lausanne, Switzerland
fDate :
Oct. 30 2008-Nov. 2 2008
Abstract :
InAlGaAs/AlGaAs-based wafer-fused long-wavelength VCSELs with tunnel junction injection emitting in the 1310 nm and 1550 nm bands show high single-mode output and high speed modulation capabilities of 10 Gbps. Fundamental emission close to 6 mW at room temperature and 2.5 mW at 80°C for both 1310 nm and 1550 nm devices is demonstrated for the first time.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; indium compounds; semiconductor lasers; surface emitting lasers; tunnelling; InAlGaAs-AlGaAs; bit rate 10 Gbit/s; fundamental emission; high fundamental mode power; high speed modulation; high speed wafer-fused VCSEL; power 2.5 mW; single-mode output; temperature 293 K to 298 K; temperature 80 degC; tunnel junction injection; wavelength 1310 nm; wavelength 1550 nm; Apertures; Dielectrics; Distributed Bragg reflectors; Fabrication; Indium phosphide; Optical modulation; Power generation; Reflectivity; Temperature distribution; Vertical cavity surface emitting lasers;
Conference_Titel :
Optical Fiber Communication & Optoelectronic Exposition & Conference, 2008. AOE 2008. Asia
Conference_Location :
Shanghai
Print_ISBN :
978-1-55752-863-6
Electronic_ISBN :
978-1-55752-863-6
