Title :
Controllable light utilization in silicon-based thin film solar cells
Author :
Zhao, Ying ; Chen, Peizhuan ; Zhang, Xiaodan ; Cai, Ning ; Geng, Xinhua ; Xiong, Shaozhen
Author_Institution :
Inst. of Photo-Electron. Thin Film Devices & Technol., Nankai Univ., Tianjin, China
fDate :
Oct. 30 2008-Nov. 2 2008
Abstract :
Controllable light utilization in silicon-based-thin-film solar cells with a DBR structure have been simulated. A experimental model cells constructed by a-Si pin/ZnO (~70 nm)/P+muc-Si(20 nm) were verified. The ratio of Isc increment can be reached to 14.1%.
Keywords :
II-VI semiconductors; semiconductor thin films; silicon; solar cells; thin film devices; wide band gap semiconductors; zinc compounds; DBR structure; II-VI semiconductor; Si-ZnO-Si; controllable light utilization; elemental semiconductor; light trapping; thin film solar cells; Absorption; Distributed Bragg reflectors; Lighting control; Optical films; Photovoltaic cells; Reflectivity; Refractive index; Semiconductor thin films; Thin film devices; Zinc oxide;
Conference_Titel :
Optical Fiber Communication & Optoelectronic Exposition & Conference, 2008. AOE 2008. Asia
Conference_Location :
Shanghai
Print_ISBN :
978-1-55752-863-6
Electronic_ISBN :
978-1-55752-863-6
