DocumentCode
505842
Title
All-optical transistor operation based on bistability principle in nonlinear DFB GaInAsP-InP waveguide: A transient perspective
Author
Yosia, Yosia ; Akano, Yoichi ; Tamura, Kazuhiko ; Mizumoto, Tetsuya ; Ping, Shum
Author_Institution
Dept. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fYear
2008
fDate
Oct. 30 2008-Nov. 2 2008
Firstpage
1
Lastpage
3
Abstract
All-optical transistor based on bistability principle in nonlinear DFB GaInAsP-InP waveguide was demonstrated experimentally. The unstable state is shown to play a crucial role in distinguishing probe transmission transient artifacts between switching and transistor mode.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical bistability; optical materials; optical waveguides; optoelectronic devices; GaInAsP-InP; all-optical transistor operation; bistability principle; nonlinear DFB waveguide; probe transmission transient artifacts; switching mode; transistor mode; Costs; Data communication; High speed optical techniques; Integrated optics; Multiplexing; Optical arrays; Optical fiber communication; Optical modulation; Photonic integrated circuits; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication & Optoelectronic Exposition & Conference, 2008. AOE 2008. Asia
Conference_Location
Shanghai
Print_ISBN
978-1-55752-863-6
Electronic_ISBN
978-1-55752-863-6
Type
conf
Filename
5348668
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