• DocumentCode
    505906
  • Title

    The study of SiO2,TiO2´s effect to the anti-bending properties of flexible ITO films

  • Author

    Yuqiong, Li ; Zhinong, Yu ; Wei, Xue ; Fan, Xia

  • Author_Institution
    Dept. of Opt. Eng., Beijing Inst. of Technol., Beijing, China
  • fYear
    2008
  • fDate
    Oct. 30 2008-Nov. 2 2008
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The study found that SiO2 is better than TiO2 on the improvement of anti-bendingradius to the ITO films, but is worse than TiO2 on the improvement of anti-bending times to the ITO films.
  • Keywords
    bending; buffer layers; indium compounds; photoelectricity; polymers; semiconductor materials; semiconductor thin films; silicon compounds; tensile strength; titanium compounds; transparency; PET plastic substrate; SiO2 buffer layers; SiO2-ITO; TiO2 buffer layers; TiO2-ITO; antibending properties; flexible ITO films; photoelectric properties; tensile stress; transparent characteristics; Buffer layers; Conductive films; Indium tin oxide; Ion sources; Optical films; Positron emission tomography; Rough surfaces; Surface roughness; Tensile stress; Vacuum technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Fiber Communication & Optoelectronic Exposition & Conference, 2008. AOE 2008. Asia
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-55752-863-6
  • Electronic_ISBN
    978-1-55752-863-6
  • Type

    conf

  • Filename
    5348734
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=505906