Title :
Characteristics improvement of an integrated HBT cascode opto-electronic mixer
Author :
Kaatuzian, Hassan ; Nayeri, Hadi Dehghan
Author_Institution :
Electr. Eng. Dept., AmirKabir Univ. of Technol., Tehran, Iran
fDate :
Oct. 30 2008-Nov. 2 2008
Abstract :
In this paper we will analyze an integrated electrically pumped opto-electronic mixer, consisting of two InP/GaInAs hetero junction bipolar transistor (HBT), in a cascode configuration. A new HBT with modified physical structure will be proposed and simulated to improve frequency characteristics of cascode mixer.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; mixers (circuits); HBT; InP-GaInAs; cascode mixer frequency characteristics; electrically pumped mixer; hetero junction bipolar transistor characteristics; integrated HBT cascode opto-electronic mixer; Distributed feedback devices; Epitaxial layers; Frequency; Heterojunction bipolar transistors; Indium phosphide; Modulation coding; Optical feedback; Optical mixing; Optical modulation; Stimulated emission;
Conference_Titel :
Optical Fiber Communication & Optoelectronic Exposition & Conference, 2008. AOE 2008. Asia
Conference_Location :
Shanghai
Print_ISBN :
978-1-55752-863-6
Electronic_ISBN :
978-1-55752-863-6
