Title :
A switched-reset 300e ENC 10mW readout ASIC in 180nm CMOS for CdZnTe particle detector
Author :
Li, XiangYu ; Chen, Xin Guang ; Zhang, Qi ; Sun, Yihe
Author_Institution :
Tsinghua Nat. Lab. for Inf. Sci. & Technol., Tsinghua Univ., Beijing, China
Abstract :
A 180 nm CMOS front-end readout circuit for CdZnTe particle detector with tens of pF capacitance is presented. It uses switched-reset system and 4th-order complex pole semi-Gaussian shaper. The input MOSFET is optimized with the consideration of the properties of deep submicron technologies and the limitation of power dissipation. And a swing reduction technique is used on the switch signal to improve the parasitic effects. The post-layout simulation result shows that the readout ASIC has about a 300e ENC at 20 pF detector capacitance and 10 mW power dissipation.
Keywords :
CMOS integrated circuits; application specific integrated circuits; cadmium compounds; particle detectors; zinc compounds; 4th-order complex pole semiGaussian shaper; CMOS front-end readout circuit; CdZnTe; capacitance 20 pF; deep submicron technologies; input MOSFET; particle detector; post-layout simulation; power 10 mW; power dissipation; size 180 nm; swing reduction technique; switched-reset 300e ENC readout ASIC; switched-reset system; Application specific integrated circuits; CMOS technology; MOSFET circuits; Microelectronics; Power dissipation; Pulse amplifiers; Radiation detectors; Switches; Switching circuits; Voltage; deep submicron CMOS; particle detection readout circuit; switched-reset;
Conference_Titel :
ASIC, 2009. ASICON '09. IEEE 8th International Conference on
Conference_Location :
Changsha, Hunan
Print_ISBN :
978-1-4244-3868-6
Electronic_ISBN :
978-1-4244-3870-9
DOI :
10.1109/ASICON.2009.5351445
