Four-point probe and FTIR characterization of bilayer films based on silicon annealed at 850°C

The present paper focuses on the study of electrical and physico-chemical properties of films deposited by Low Pressure Chemical Vapor Deposition or (LPCVD). These films are composed of two layers, boron doped polysilicon (polySi) and nitrogen doped polysilicon (NIDOS). The results indicate that the resistivity values increases versus increasing of the annealing duration, this can be explained by the formation of B-N complex. However, Fourier Transformation Infrared Spectroscopy Analyses (FTIR) results show, the increase of the absorbance intensity of B-N complex with increasing of annealing duration. Therefore, the formation of B-N bond tends to degrade the electrical properties of polySi/NIDOS by the decrease electrically active boron density in polycrystalline.