Numerical modelling and optimization of SiGeC HBT for 0.13µm BiCMOS technology

SiGeC Heterojuncion Bipolar Transistor (HBT) BiCMOS technology represents a compelling low-cost, highly integrated, silicon-based solution for a wide variety of high-speed and low noise circuit and system applications, and is being aggressively developed around the world to support the global electronics infrastructure needed for the communications revolution. We report in this paper, the impact of carbon into SiGeC (HBT) devices realized in an industrial BiCMOS Si_1-x-yGe_xC_y 0.13 μm process with polysilicon emitter quasi self aligned structure, using our own software simulator (SImulation BIdimensional by Finite Difference) "SIBIDIF", taking into account an approach of non uniform heterostructure parameters. In order to the consideration of different geometry in the base layer for Si/SiGeC HBT is fundamental aspect to predict in precise way these electric characteristics.. The purpose of this work is the modelling and optimisation of high performance Si/SiGeC for different geometries of base layer varied between 100 nm and 30 nm.