DocumentCode :
50683
Title :
A Broadband 200 GHz Amplifier with 17 dB Gain and 18 mW DC-Power Consumption in 0.13 
m SiGe BiCMOS
Author :
Fritsche, David ; Carta, C. ; Ellinger, F.
Author_Institution :
Dept. of Circuit Design & Network Theor., Dresden Univ. of Technol., Dresden, Germany
Volume :
24
Issue :
11
fYear :
2014
fDate :
Nov. 2014
Firstpage :
790
Lastpage :
792
Abstract :
This letter presents a 200 GHz amplifier for low-power high data-rate wireless communications. With large bandwidth and energy efficiency as concurrent goals, cascode stages for high power gain and dual-band matching networks to maximize the bandwidth have been employed. The resulting amplifier has been implemented in a 450 GHz SiGe BiCMOS technology, requiring a circuit area of only 800 μm × 300 μm. The characterized circuit exhibits 16.9 dB of maximum power gain, 44 GHz of bandwidth and -3.5 dBm of output power at 1 dB compression, while requiring only 18 mW of DC-power.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; UHF amplifiers; UHF integrated circuits; VHF amplifiers; wideband amplifiers; BiCMOS technology; DC-power consumption; SiGe; bandwidth 44 GHz; broadband amplifier; dual-band matching network; energy efficiency; frequency 200 GHz; frequency 450 GHz; gain 16.9 dB; gain 17 dB; low-power high data-rate wireless communication; power 18 mW; size 0.13 mum; BiCMOS integrated circuits; Broadband amplifiers; Impedance matching; Low-noise amplifiers; Millimeter wave integrated circuits; Power generation; Silicon germanium; BiCMOS integrated circuits; broadband amplifiers; impedance matching; low-noise amplifiers; millimeter-wave integrated circuits;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2014.2350691
Filename :
6888524
Link To Document :
