DocumentCode
507973
Title
Characterization of Low Temperature Deposited Flexible Amorphous Silicon Solar Cells
Author
Li, Yingge ; Du, Dongxing
Author_Institution
Coll. of Autom. & Electron. Eng., Qingdao Univ. of Sci. & Technol., Qingdao, China
Volume
1
fYear
2009
fDate
16-18 Oct. 2009
Firstpage
548
Lastpage
551
Abstract
N-i-p structure amorphous silicon solar cells deposited on flexible and glass substrates are successfully fabricated at low substrate temperature of 100°C through plasma enhanced chemical vapor deposition (PECVD) system. The external parameters of solar cells are characterized by solar simulator. The results indicate the best dot of the solar cells with glass substrate can reach to 5.54% of conversion efficiency with fill factor of 0.54 and open circuit voltage of 0.9, while the conversion efficiency for flexible solar cells is 4.03% with fill factor of 0.5 and open circuit voltage of 0.82. With conversion efficiencies in the same magnitude, the low temperature deposited flexible solar cells show promising potentials on future large scale applications.
Keywords
plasma CVD coatings; solar cells; low temperature deposited flexible amorphous silicon solar cells; plasma enhanced chemical vapor deposition; Amorphous silicon; Chemical vapor deposition; Circuit simulation; Flexible printed circuits; Glass; Photovoltaic cells; Plasma chemistry; Plasma simulation; Plasma temperature; Voltage; PECVD; amorphous silicon; flexible solar cells; low temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Energy and Environment Technology, 2009. ICEET '09. International Conference on
Conference_Location
Guilin, Guangxi
Print_ISBN
978-0-7695-3819-8
Type
conf
DOI
10.1109/ICEET.2009.139
Filename
5364315
Link To Document