Characterization and Modeling of 4H-SiC Lateral MOSFETs for Integrated Circuit Design

Author

Mudholkar, Mihir ; Mantooth, Homer Alan

Author_Institution

Stand. Products Group, ON Semicond., Phoenix, AZ, USA

Volume

60

Issue

6

fYear

2013

fDate

Jun-13

Firstpage

1923

Lastpage

1930

Abstract

A new process in 4H-SiC is developed that features n-type buried and inversion channel lateral MOSFETs that are fabricated with several different channel lengths (2-8 μm) and widths (8-32 μm ) and characterized over a wide temperature range (25°C-225°C). It is shown that the on-resistance of enhancement-mode SiC MOSFETs reduces with temperature despite a reduction in inversion mobility because of the interaction of interface states with temperature. To enable integrated circuit development using the developed MOSFETs, their electrical characteristics are modeled over geometry and temperature using the industry standard PSP MOSFET model. A new mathematical formulation to describe the presence of the interface states is also developed and implemented in the PSP model, and excellent agreement is shown between measurement and simulation using the modified PSP model.

Keywords

MOSFET; integrated circuit design; mathematical analysis; semiconductor device models; silicon compounds; wide band gap semiconductors; 4H-lateral MOSFET modeling; SiC; enhancement-mode MOSFET on-resistance; geometry; industry standard PSP MOSFET model; integrated circuit design; integrated circuit development; interface state interaction; inversion channel lateral MOSFET; inversion mobility reduction; mathematical formulation; modified PSP model; n-type buried MOSFET; temperature 25 degC to 225 degC; Device characterization; MOSFET; device modeling; device simulation; silicon carbide (SiC);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2258287

Filename

6514574