Title :
A study on the Cl2/C2H4/Ar plasma etching of ITO using inductively coupled plasma
Author :
Fang, Rong ; Guo, Xia ; Jiang, WenJing ; Guo, YuHan ; Qin, Yuan ; Shen, Guang Di ; Han, Jin Ru
Author_Institution :
Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Control Engineering,Beijing University of Technology, 100124, China
Abstract :
In this study, the indium tin oxide (ITO) was etched by an inductively coupled plasma (ICP) etcher using Cl2/C2H4/Ar as the etching gases. A detailed study on the samples etched in different parameters was performed.
Keywords :
Argon; Bonding; Dry etching; Indium tin oxide; Plasma applications; Plasma devices; Radio frequency; Sputter etching; Thin film devices; Wet etching;
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location :
Shanghai, China
Print_ISBN :
978-1-55752-877-3
Electronic_ISBN :
978-1-55752-877-3
