• DocumentCode
    510391
  • Title

    Enhancement and stabilization of photoluminescence of porous silicon by LaF3 passivation

  • Author

    Mou, Sinthia Shabnam ; Rahman, Md.Abdur ; Ismail, Abu Bakar Md.

  • Author_Institution
    School of Engineering and Computer Science, Independent University, Dhaka 1212, Bangladesh
  • fYear
    2009
  • fDate
    2-6 Nov. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    E-beam evaporated LaF3 passivation of porous silicon (PS) has been investigated in this report. Heat treatment of the LaF{in3-passivated PS structure improves the PL characteristics. Passivation with thinner layer of LaF{in3 leaded to a good enhancement of photoluminescence intensity while thicker layer showed stabilization of photoluminescence.
  • Keywords
    Electronic mail; Etching; Heat treatment; Optical films; Optical refraction; Passivation; Photoluminescence; Physics; Protection; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
  • Conference_Location
    Shanghai, China
  • Print_ISBN
    978-1-55752-877-3
  • Electronic_ISBN
    978-1-55752-877-3
  • Type

    conf

  • Filename
    5377050
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=510391