Title :
Photoluminescence with ultra-wide spectrum from radiative defects in Si-rich SiNx
Author :
Ke, Weiwei ; Feng, Xue ; Tang, Xuan ; Tanaka, Yoshinori ; Ohnishi, Dai ; Huang, Yidong
Author_Institution :
State Key Lab. of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
Abstract :
The photoluminescence from the radiative recombination defects in Si-rich SiNx with various Si concentrations was investigated. Due to the Si and N dangling bonds, ultra-wide spectra with full width at half maximum of ∼250nm were achieved in visible region.
Keywords :
Annealing; Atmosphere; Chemical analysis; Luminescence; Optical interconnections; Photoluminescence; Plasma temperature; Quantum dots; Silicon compounds; Spectroscopy;
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location :
Shanghai, China
Print_ISBN :
978-1-55752-877-3
Electronic_ISBN :
978-1-55752-877-3
