Title :
Investigation of the doping profile effect on operation of internally Q-switched laser diodes aiming at high-power picosecond light source
Author :
Lanz, Brigitte ; Vainshtein, Sergey ; Kostamovaara, Juha ; Lantratov, Vladimir ; Kaluzhniy, Nikolay
Author_Institution :
Electronics Laboratory, Department of Electrical and Information Engineering, University of Oulu, P.O. Box 4500, 90014, Finland
Abstract :
Lately demonstrated high-power (50W from 20µm stripe) picosecond (30ps) lasing from a laser diode has addressed us to internal Q-switching phenomenon, discovered four decades ago and not understood so far. We found that the realization of nanosecond or picosecond mode from a diode depends on doping profile across the structure.
Keywords :
Costs; Diode lasers; Doping profiles; Laser radar; Light sources; Optical pulse generation; Optical transmitters; Semiconductor diodes; Semiconductor lasers; Solid lasers;
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location :
Shanghai, China
Print_ISBN :
978-1-55752-877-3
Electronic_ISBN :
978-1-55752-877-3
