Title :
Nitrogen plasma enhanced quantum well intermixing in InGaAsP/InP laser structure
Author :
Peng, Shenghua ; Zhang, Xin ; He, Jian-Jun
Author_Institution :
Center for Integrated Optoelectronics, State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou, China, 310027
Abstract :
Experimental results on a new method of plasma enhanced quantum well intermixing is presented. Using nitrogen plasma treatment followed by rapid thermal annealing, a 100nm-blueshift of photoluminescence peak is obtained. The new method has much weaker side-effect of etching than previously reported method using Argon plasma.
Keywords :
Annealing; Argon; Etching; Indium phosphide; Nitrogen; Plasma applications; Plasma immersion ion implantation; Plasma measurements; Plasma temperature; Quantum well lasers;
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location :
Shanghai, China
Print_ISBN :
978-1-55752-877-3
Electronic_ISBN :
978-1-55752-877-3
