DocumentCode
510622
Title
Q-switched Yb-doped microstructure fiber laser using gaas as saturable absorber
Author
Fu, Shenggui ; Liu, Xiaojuan
Author_Institution
School of Science, Shandong University of Technology, Shandong Zibo China, 255049
fYear
2009
fDate
2-6 Nov. 2009
Firstpage
1
Lastpage
2
Abstract
A passive Q-switched Yb-doped microstructure fiber (MF) laser is demonstrated using a GaAs wafer as the saturable absorber. A pulse duration as short as 80 ns was obtained with the maximum repetition rate of 830 Hz. The maximum average output power is 5.8 W at 1080 nm wavelength.
Keywords
Fiber lasers; Gallium arsenide; Laser beams; Laser excitation; Laser modes; Microstructure; Mirrors; Optical pulses; Pump lasers; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location
Shanghai, China
Print_ISBN
978-1-55752-877-3
Electronic_ISBN
978-1-55752-877-3
Type
conf
Filename
5377288
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