DocumentCode
510676
Title
Semipolar (11–22)-based InGaN/GaN quantum wells for visible light emitters
Author
Funa, Mitsuru ; Kawakam, Yoichi
Author_Institution
Department of Electronics Science and Engineering, Kyoto University, 615-8510, Japan
fYear
2009
fDate
2-6 Nov. 2009
Firstpage
1
Lastpage
2
Abstract
Visible light emitting diodes (LEDs) using semipolar (11–22)-oriented InGaN/GaN quantum wells (QWs) were demonstrated. Three dimensional microfacet structures realized white/pastel emissions without phosphors, while planar structures led to LEDs with much less polarization-induced internal electric fields compared to the conventional LEDs on the (0001) plane, both of which cannot be realized without the (11–22) planes.
Keywords
Gallium nitride; Light emitting diodes; Low earth orbit satellites; Optical polarization; Particle beam optics; Phosphors; Piezoelectric polarization; Semiconductor diodes; Stimulated emission; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location
Shanghai, China
Print_ISBN
978-1-55752-877-3
Electronic_ISBN
978-1-55752-877-3
Type
conf
Filename
5377342
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