DocumentCode
510743
Title
Optical static random access memory cell using an integrated semiconductor ring laser
Author
Li, Bei ; Memon, Muhammad Irfan ; Wang, Zhuoran ; Yu, Siyuan ; Mezosi, Gabor ; Sorel, Marc
Author_Institution
Dept. of Electrical and Electronic Engineering, University of Bristol, BS8 1TR, UK
fYear
2009
fDate
2-6 Nov. 2009
Firstpage
1
Lastpage
2
Abstract
This paper proposes and demonstrates an all-optical static random access memory (SRAM) cell using a bistable semiconductor ring laser set-reset flip-flop integrated with four SOAs at each output. Read and write operation at 1Gb/s are achieved with extinction ration ≫10dB.
Keywords
Integrated optics; Optical bistability; Optical devices; Optical modulation; Optical saturation; Random access memory; Read-write memory; Ring lasers; SRAM chips; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location
Shanghai, China
Print_ISBN
978-1-55752-877-3
Electronic_ISBN
978-1-55752-877-3
Type
conf
Filename
5377409
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