Title :
Study of photoluminescence properties of Nd-O+-codoped Si-based thin film
Author :
Yuan, Meiling ; Li, Chenfa ; Leng, Xinli
Author_Institution :
Department of Phisics, Nanchang University, Jiangxi, 33031, China
Abstract :
The photoluminescence(PL) spectra at room temperature for the Si-based samples doped by Nd O+ are measured. All the samples possess blue-violet PL properties and light emission is stable. The PL spectra has multiple peak structure. The intensity of PL spectra is relative to Nd and O+ implantation and the annealing temperature. The light emission is more greater for the sample of first O+ then Nd ion-implanted silicon than the one of first Nd then O+ ion-implanted silicon.
Keywords :
Annealing; Electron emission; Luminescence; Mechanical factors; Neodymium; Optical films; Photoluminescence; Shape; Silicon; Temperature;
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location :
Shanghai, China
Print_ISBN :
978-1-55752-877-3
Electronic_ISBN :
978-1-55752-877-3
