DocumentCode :
510796
Title :
The electrical properties of the diamond optoelectronic device
Author :
Zhang, Yi ; Wang, Lin-jun ; Huang, Jian ; Tang, Ke ; Zhang, Fengjuan ; Fang, Qian ; Zeng, Qingkai ; Xu, Run ; Zhang, Jijun ; Min, Jiahua ; Xia, Yiben
Author_Institution :
School of Materials Science and Engineering, Shanghai University, 200072, China
fYear :
2009
fDate :
2-6 Nov. 2009
Firstpage :
1
Lastpage :
2
Abstract :
200 εm thick free-standing polycrystalline diamond films were grown by microwave plasma chemical vapor deposition (MPCVD) method. The nucleation surfaces of diamond were characterized by XRD, Raman scattering, atomic force microscopy (AFM) method. An ultraviolet (UV) optoelectronic device was fabricated on diamond nucleation surface, showing clear modulation of channel current.
Keywords :
Atomic force microscopy; Chemical vapor deposition; Microwave devices; Microwave theory and techniques; Optoelectronic devices; Plasma chemistry; Plasma devices; Plasma properties; Raman scattering; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location :
Shanghai, China
Print_ISBN :
978-1-55752-877-3
Electronic_ISBN :
978-1-55752-877-3
Type :
conf
Filename :
5377462
Link To Document :
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