• DocumentCode
    510815
  • Title

    Temperature characteristics improvement using strain in barriers of 1.3µm AlGaInAs-InP multiple quantum well laser

  • Author

    Yekta, Vahid Bahrami ; Kaatuzian, Hassan

  • Author_Institution
    Photonics Research Laboratory, Amirkabir University of Technology, Tehran, Iran
  • fYear
    2009
  • fDate
    2-6 Nov. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Compressive strain is applied in barriers of multiple quantum well AlGaInAs-InP 1.3µm lasers and cause to better gain and current density in high temperatures .multi band effective mass and quantum electrodynamics theories are used to simulate the structure. The mode gain-current density characteristic is improved more than 20% in 85°C.
  • Keywords
    Capacitive sensors; Current density; Laser modes; Laser theory; Laser transitions; Optical refraction; Optical variables control; Quantum mechanics; Quantum well lasers; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
  • Conference_Location
    Shanghai, China
  • Print_ISBN
    978-1-55752-877-3
  • Electronic_ISBN
    978-1-55752-877-3
  • Type

    conf

  • Filename
    5377481
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=510815