Field-Emission and Photoelectrical Characteristics of Ga–ZnO Nanorods Photodetector

Author

Chih-Hung Hsiao ; Chien-Sheng Huang ; Sheng-Joue Young ; Shoou-Jinn Chang ; Jia-Jyun Guo ; Chung-Wei Liu ; Tsung-Ying Yang

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

60

Issue

6

fYear

2013

fDate

Jun-13

Firstpage

1905

Lastpage

1910

Abstract

In this paper, vertically aligned Ga-doped ZnO nanorods are grown on glass substrate by a low-temperature process, hydrothermal method. The Ga-doped ZnO nanorods are needlelike in shape. The field-emission performance can be enhanced by Ga dopant and needlelike in shape. It is found that the turn-on electrical field is reduced from 3.63 to 3.15 V/μm and the field enhancement factor is enhanced from 9058 to 13529 by ultraviolet (UV) illumination. Under UV illumination, the Ga-ZnO nanorods photodetectors exhibit a high UV photocurrent fast rise time, and high UV-to-visible ratio.

Keywords

II-VI semiconductors; field emission; gallium; nanorods; photodetectors; photoemission; semiconductor counters; semiconductor growth; wide band gap semiconductors; zinc compounds; Ga-ZnO; UV illumination; field enhancement factor; field-emission performance; glass substrate; high UV photocurrent fast rise time; high UV-to-visible ratio; hydrothermal method; low-temperature process; nanorod photodetector; photoelectrical characteristics; turn-on electrical field; ultraviolet illumination; vertically aligned nanorods; Field emission; Ga-doped ZnO nanorod; hydrothermal; photodetector;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2257790

Filename

6514599