A Novel impact Ionization MOS (I-MOS) structure using a silicon-germanium/silicon heterostructure channel

Author

Nematian, Hamed ; Fathipour, Morteza ; Nayeri, Maryam

Author_Institution

Device & Process Modeling & Simulation Lab., Univ. of Tehran, Tehran, Iran

fYear

2008

fDate

14-17 Dec. 2008

Firstpage

228

Lastpage

231

Abstract

In order to decrease bias voltages in IMOS devices we have proposed a new IMOS structure with Si-Ge/Si heterostructure channel in this paper. In comparison with previously reported, single gate SOI IMOS and SGOI IMOS structures, this device can provide higher reduction in the source voltage as well as in threshold voltage. Moreover, the proposed structure provides considerable reduction in off-state current, while preserving the on-state current.

Keywords

Ge-Si alloys; MIS devices; elemental semiconductors; impact ionisation; semiconductor heterojunctions; silicon; IMOS devices; SiGe-Si; impact ionization MOS structure; off-state current; on-state current; silicon-germanium-silicon heterostructure channel; Computational modeling; Computer simulation; Germanium silicon alloys; Impact ionization; Laboratories; Microelectronics; Photonic band gap; Semiconductor process modeling; Silicon germanium; Threshold voltage; Heterostructure channel; IMOS Bias voltage reduction; Off current; Silicon-Germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2008. ICM 2008. International Conference on

Conference_Location

Sharjah

Print_ISBN

978-1-4244-2369-9

Electronic_ISBN

978-1-4244-2370-5

Type

conf

DOI

10.1109/ICM.2008.5393794

Filename

5393794