Title :
A Novel impact Ionization MOS (I-MOS) structure using a silicon-germanium/silicon heterostructure channel
Author :
Nematian, Hamed ; Fathipour, Morteza ; Nayeri, Maryam
Author_Institution :
Device & Process Modeling & Simulation Lab., Univ. of Tehran, Tehran, Iran
Abstract :
In order to decrease bias voltages in IMOS devices we have proposed a new IMOS structure with Si-Ge/Si heterostructure channel in this paper. In comparison with previously reported, single gate SOI IMOS and SGOI IMOS structures, this device can provide higher reduction in the source voltage as well as in threshold voltage. Moreover, the proposed structure provides considerable reduction in off-state current, while preserving the on-state current.
Keywords :
Ge-Si alloys; MIS devices; elemental semiconductors; impact ionisation; semiconductor heterojunctions; silicon; IMOS devices; SiGe-Si; impact ionization MOS structure; off-state current; on-state current; silicon-germanium-silicon heterostructure channel; Computational modeling; Computer simulation; Germanium silicon alloys; Impact ionization; Laboratories; Microelectronics; Photonic band gap; Semiconductor process modeling; Silicon germanium; Threshold voltage; Heterostructure channel; IMOS Bias voltage reduction; Off current; Silicon-Germanium;
Conference_Titel :
Microelectronics, 2008. ICM 2008. International Conference on
Conference_Location :
Sharjah
Print_ISBN :
978-1-4244-2369-9
Electronic_ISBN :
978-1-4244-2370-5
DOI :
10.1109/ICM.2008.5393794
