Simulation and analysis of single-electron transistors with 1-dimension multiple islands

Single-electronic transistors (SETs) are considered as the attractive candidates for post-COMS VLSI due to their ultra-small size and low power consumption. Because SETs with single island can not work at room temperature normally, more and more researchers begin to make research on the SETs with 1-dimension multi-islands. Based on the Monte Carlo (MC) and stable diagram method, the critical problems during simulating and analyzing the SETs with multi-islands are investigated, e.g. capacitance matrix, potential of the islands, the free energy and so on. Meanwhile, double-island SET is simulated and analyzed as an example of SETs with 1-D muti-islands in detail. For the first time, 3-D stable diagram is obtained, and some new phenomena are analyzed in the paper. And through analyzing the result it´s shown that although SETs with 1-D muti-islands is more useful and powerful than SETs with single island, there inevitably exists many effects because of the coupling energy between the islands.