Title :
Barrier formation technique using low energy Ar ion irradiation to form wide temperature range operable SWCNT-SET
Author :
Mori, Takahiro ; Ishibashi, Koji ; Tsuruoka, Yasuhiro ; Achiba, Yohji
Author_Institution :
Adv. Device Lab., RIKEN, Wako, Japan
Abstract :
We have demonstrated the wide temperature range operation of single-walled carbon nanotube single electron transistor (SWCNT-SET). The barriers, which were to confine electrons in a Coulomb island, were the higher resistivity segments formed on an individual SWCNT by low energy Ar ion partial irradiation. The present SETs had quite low self-capacitance, which was originated from the quite low barrier capacitances, and operated up to 160K.
Keywords :
argon; capacitance; carbon nanotubes; electrical resistivity; ion beam effects; nanoelectronics; nanolithography; single electron transistors; Ar; C; Coulomb island; barrier capacitances; barrier formation technique; eletrical resistivity; low energy ion irradiation; self-capacitance; single-walled carbon nanotube single electron transistor; wide temperature range operable SWCNT-SET; Argon; Atomic force microscopy; Capacitance; Carbon nanotubes; Energy consumption; FETs; Fabrication; Laboratories; Single electron transistors; Temperature distribution; carbon nanotube; ion irradiation; single electron transistor; tunneling barrier;
Conference_Titel :
Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on
Conference_Location :
Genoa
Print_ISBN :
978-1-4244-4832-6
Electronic_ISBN :
1944-9399
