DocumentCode
511409
Title
The effects of pulse injection method on the photoluminescence of ZnO nanotetrapods
Author
Charnhattakorn, Busarakam ; Charinpanitkul, Tawatchai ; Pavarajarn, Varong
Author_Institution
Dept. of Chem. Eng., Chulalongkorn Univ., Bangkok, Thailand
fYear
2009
fDate
26-30 July 2009
Firstpage
179
Lastpage
182
Abstract
The ZnO nanotretapods prepared by a catalyst-free thermal oxidation between zinc vapor and oxygen were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and photoluminescence spectroscopy (PL). To improve the gas-mixing in the reactor, nitrogen gas was supplied in pulse into the reaction zone. This method could affect the oxygen vacancy within the crystal as well as the photoluminescence spectra of the ZnO nanotetrapods. The effects of pulse injection in term of pulse pressure and pulse period were investigated. The increased flowing period of the supplied nitrogen and the increased pulse pressure resulted in the increase in the oxygen vacancy and visible PL intensity of the product. The pulse of carrier gas with 8 s flowing period and 3 s non-flowing period at 3 bar of pulse pressure brought about the product with the highest oxygen vacancy and visible PL intensity.
Keywords
II-VI semiconductors; X-ray diffraction; X-ray photoelectron spectra; nanostructured materials; oxidation; photoluminescence; scanning electron microscopy; vacancies (crystal); wide band gap semiconductors; zinc compounds; X-ray diffraction; X-ray photoelectron spectroscopy; ZnO; carrier gas; catalyst-free thermal oxidation; gas-mixing; nanotetrapods; nitrogen gas; oxygen vacancy; photoluminescence spectroscopy; pulse injection method; pulse pressure; reaction zone; scanning electron microscopy; zinc vapor; Inductors; Nitrogen; Oxidation; Photoelectron microscopy; Photoluminescence; Scanning electron microscopy; Spectroscopy; X-ray diffraction; X-ray scattering; Zinc oxide; Pulse injection; Synthesis; Thermal oxidation; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on
Conference_Location
Genoa
ISSN
1944-9399
Print_ISBN
978-1-4244-4832-6
Electronic_ISBN
1944-9399
Type
conf
Filename
5394600
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