DocumentCode
511430
Title
Graphene nanoribbon schottky diodes using asymmetric contacts
Author
Kargar, Alireza ; Lee, Chengkuo
Author_Institution
Dept. of Electr. & Comput. Eng., Shiraz Univ., Shiraz, Iran
fYear
2009
fDate
26-30 July 2009
Firstpage
243
Lastpage
245
Abstract
This paper presents Schottky diodes based on graphene nanoribbons (GNRs). We show that double gate GNR field effect transistors (FETs) with a p-type semiconducting GNR and asymmetric Schottky contacts provide a good rectification characteristic. The diode rectification can be tuned through the use of different GNRs with various widths. A rectification ratio of ~ 2×107 is achieved for an N = 10 GNR at a low gate bias voltage of 0.2 V.
Keywords
Schottky diodes; Schottky gate field effect transistors; graphene; nanostructured materials; rectification; semiconductor device models; C; FET; Schottky diodes; field effect transistors; graphene nanoribbon; rectification; voltage 0.2 V; Ballistic transport; Double-gate FETs; Drives; P-i-n diodes; P-n junctions; Schottky barriers; Schottky diodes; Semiconductivity; Semiconductor diodes; Tunneling; Schottky diode; asymmetric contacts; graphene nanoribbon;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on
Conference_Location
Genoa
ISSN
1944-9399
Print_ISBN
978-1-4244-4832-6
Electronic_ISBN
1944-9399
Type
conf
Filename
5394621
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