Title :
Raman spectral analysis of nitrogen incorporated C60 films
Author :
Ashrafuzzaman, A.N.M. ; Zubair, Ahmed ; Mominuzzaman, S.M. ; Soga, Tetsuo ; Jimbo, Takashi
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol. (BUET), Dhaka, Bangladesh
Abstract :
Excimer Pulse laser Deposition (PLD) is used to grow thin carbon films where C60 precursor is used as target. The effect of nitrogen (N2) incorporation is observed by varying the N2 partial pressure. When the film is deposited in N2 free environment it is damaged by high energetic laser beam irradiation and it becomes amorphous. With the increase of N2 partial pressure the film becomes more polymerized retaining its crystalline graphene sheet structure. The evolution of D, G band and reason behind their variations are studied. The complete Raman analysis is presented here and how polymeric semiconducting carbon can be formed is explained through individual peak position, FWHM (full width half maximum), Id/Ig, Id/If, If/Ig ratio. Such nitrogen environment helps the film more useful for photovoltaic applications.
Keywords :
Raman spectra; amorphous state; doping; excimer lasers; fullerenes; laser beam effects; nitrogen; pulsed laser deposition; semiconductor thin films; C60 films; C60:N; D band; G band; Raman spectral analysis; amorphous state; carbon films growth; crystalline sheet structure; excimer pulse laser deposition; laser beam irradiation; partial pressure; photovoltaic applications; polymeric semiconducting carbon; polymerization; Amorphous materials; Crystallization; Laser beams; Nitrogen; Optical pulses; Polymer films; Pulsed laser deposition; Semiconductivity; Semiconductor films; Spectral analysis; C60; Nitrogen incorporation; Raman spectroscopy; polymerized fullerene;
Conference_Titel :
Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on
Conference_Location :
Genoa
Print_ISBN :
978-1-4244-4832-6
Electronic_ISBN :
1944-9399
