Fast resistive switching in WO3 thin films for non-volatile memory applications

Author

Kügeler, Carsten ; Rosezin, Roland ; Weng, Robert ; Waser, Rainer ; Menzel, Stephan ; Klopstra, Bart ; Böttger, Ulrich

Author_Institution

Inst. of Solid State Res., Forschungszentrum Julich GmbH, Julich, Germany

fYear

2009

fDate

26-30 July 2009

Firstpage

900

Lastpage

903

Abstract

Tungsten trioxide (WO₃) thin films with Pt and Cu electrodes are characterized regarding the suitability for nonvolatile memory applications. Cells down to 70 Ã— 70 nm² are fabricated by a combination of e-beam and nanoimprint lithography. The electrical measurements reveal good properties with switching currents of only 500 nA, fast SET and RESET switching down to 5 ns and retention for 10⁴ s with a stable R_OFF/R_ON ratio larger than 10⁵.

Keywords

MIM structures; copper; electric resistance; electrodes; electron beam lithography; nanolithography; platinum; random-access storage; solid electrolytes; switching; thin films; tungsten compounds; Cu electrode; Pt electrode; Pt-WO₃-Cu; R_OFF/R_ON ratio; RESET switching; current 500 nA; e-beam lithography; fast SET switching; fast resistive switching; nanoimprint lithography; nonvolatile memory applications; switching currents; tungsten trioxide thin films; Electrodes; Electron beams; Geometry; Lithography; Plasma temperature; Resists; Sputtering; Substrates; Threshold voltage; Transistors; RRAM; Resistive switching; solid electrolyte;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on

Conference_Location

Genoa

ISSN

1944-9399

Print_ISBN

978-1-4244-4832-6

Electronic_ISBN

1944-9399

Type

conf

Filename

5394637