Title :
Fast resistive switching in WO3 thin films for non-volatile memory applications
Author :
Kügeler, Carsten ; Rosezin, Roland ; Weng, Robert ; Waser, Rainer ; Menzel, Stephan ; Klopstra, Bart ; Böttger, Ulrich
Author_Institution :
Inst. of Solid State Res., Forschungszentrum Julich GmbH, Julich, Germany
Abstract :
Tungsten trioxide (WO3) thin films with Pt and Cu electrodes are characterized regarding the suitability for nonvolatile memory applications. Cells down to 70 × 70 nm2 are fabricated by a combination of e-beam and nanoimprint lithography. The electrical measurements reveal good properties with switching currents of only 500 nA, fast SET and RESET switching down to 5 ns and retention for 104 s with a stable ROFF/RON ratio larger than 105.
Keywords :
MIM structures; copper; electric resistance; electrodes; electron beam lithography; nanolithography; platinum; random-access storage; solid electrolytes; switching; thin films; tungsten compounds; Cu electrode; Pt electrode; Pt-WO3-Cu; ROFF/RON ratio; RESET switching; current 500 nA; e-beam lithography; fast SET switching; fast resistive switching; nanoimprint lithography; nonvolatile memory applications; switching currents; tungsten trioxide thin films; Electrodes; Electron beams; Geometry; Lithography; Plasma temperature; Resists; Sputtering; Substrates; Threshold voltage; Transistors; RRAM; Resistive switching; solid electrolyte;
Conference_Titel :
Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on
Conference_Location :
Genoa
Print_ISBN :
978-1-4244-4832-6
Electronic_ISBN :
1944-9399
