DocumentCode :
511460
Title :
A ZnO quantum dot radiation dosimeter for high energy radiation measurements
Author :
Gao, Joyce Xinya ; Yeow, T. W John ; Barnett, R.B.
Author_Institution :
Dept. of Syst. Design Eng., Univ. of Waterloo, Waterloo, ON, Canada
fYear :
2009
fDate :
26-30 July 2009
Firstpage :
341
Lastpage :
344
Abstract :
High energy radiation is extensively used in various medical and industrial applications. An accurate radiation dosimetry is crucial for both radiation treatments as well as the protection of personnel across a wide range of industries, such as medicine, radiation research, space, and nuclear power plants. The unique electrical and optical properties of quantum dot (QD), such as high radiation sensitivity and good radiation resistivity make it a superior sensing material for radiation dosimeters. This paper reports the design, fabrication, and characterization of a radiation dosimeter based on ZnO QDs under 6 MV photon ionization beam. To the best of authors´ knowledge, this is the first time such QD based dosimetry devices have been made and characterized under MV radiation range. This ZnO QD based radiation dosimeter exhibits a quasi-linear response to photon irradiation dose rates and a very linear response to total doses. Besides, an outstanding repeatability with standard deviation of less than 0.32% was observed for the ZnO QD radiation dosimeter when exposed to cyclic high energy ionization radiation.
Keywords :
II-VI semiconductors; dosimeters; dosimetry; radiation therapy; semiconductor quantum dots; zinc compounds; ZnO; high-energy ionization radiation; industrial applications; linear accelerator; medical applications; photon ionization beam; photon irradiation dose rates; quantum dot radiation dosimeter; quasilinear response; voltage 6 MV; Aerospace industry; Dosimetry; Energy measurement; Ionization; Ionizing radiation; Medical treatment; Personnel; Protection; Quantum dots; Zinc oxide; Dosimeter; Photon Radiation; Quantum Dot; ZnO;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on
Conference_Location :
Genoa
ISSN :
1944-9399
Print_ISBN :
978-1-4244-4832-6
Electronic_ISBN :
1944-9399
Type :
conf
Filename :
5394651
Link To Document :
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