VLS growth of Si nanowires with in-situ doping for MOS transistors

Si nanowires suitable for MOS transistors used for large area display applications have been fabricated. They were grown using vapor-liquid-solid (VLS) growth. All important characteristics of the nanowire are controlled. The wire diameter is controlled by patterning the substrate prior to the wire growth. Over 99% of the nanowires grow in the <111> direction vertical to the <111> substrate. By controlling the gas composition, sidewall deposition and the resultant nanowire taper are controlled. The nanowires are grown approximately 20 um long without diameter variation or wire kinking. The electronic properties of the nanowire are controlled by the introduction of dopant gas into the VLS process. Nanowires with in-situ grown source/drain doping have been fabricated into transistors.