Title :
Memory characteristics of IrOx metal nanocrystals embedded in high-κ Al2O3 films with IrOx metal gate
Author :
Maikap, S. ; Banerjee, W. ; Li, W.C. ; Yang, J.R.
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
Abstract :
The memory characteristics of IrOx metal nanocrystals in an n-Si/SiO2/Al2O3/IrOx/Al2O3/IrOx structure with a small EOT of ˜6 nm have been investigated. The IrOx metal nanocrystals with a small size of ˜3 nm and high-density of ˜0.7??1013/cm2 have been observed. The enhanced memory characteristics with a large memory window of ΔV˜4V at a small gate voltage of ≪5V and good endurance of 104 cycles are achieved due to the charge storage in the IrOx nanocrystals.
Keywords :
aluminium compounds; flash memories; iridium compounds; nanoelectronics; nanostructured materials; random-access storage; silicon compounds; Si-SiO2-Al2O3-IrO-Al2O3-IrO; charge storage; flash memory; high-k films; memory characteristics; metal gate; metal nanocrystals; nanotechnology; nonvolatile memory; Al2O3; IrOx nanocrystals; flash memory; high-κ; metal gate; nanotechnology; nonvolatile memory;
Conference_Titel :
Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on
Conference_Location :
Genoa
Print_ISBN :
978-1-4244-4832-6
Electronic_ISBN :
1944-9399
