DocumentCode :
511478
Title :
Transport through magnetic quantum point contacts
Author :
Day, Timothy E. ; Cummings, Aron ; Burke, Adam M. ; Reno, John L. ; Ferry, David K. ; Goodnick, Stephen M.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
fYear :
2009
fDate :
26-30 July 2009
Firstpage :
364
Lastpage :
365
Abstract :
Hybrid magnetic quantum point contacts were fabricated in the plane of a two-dimensional electron gas, which is formed in a high mobility AlGaAs/GaAs quantum well structure. The hybrid gates are magnetized in an applied in-plane magnetic field and generate both magnetic fringe fields and an electrostatic confining potential. Low-temperature electrical characterization yielded well-resolved conductance plateaus and a strong 0.7-structure in the absence of an applied field. However, the well-known spin polarization effect of a quantum point contact in an applied magnetic field was absent, possibly due to suppressed electron-electron interactions.
Keywords :
III-V semiconductors; aluminium compounds; electric admittance; electron spin polarisation; gallium arsenide; low-temperature techniques; quantum point contacts; semiconductor quantum wells; two-dimensional electron gas; 2D electron gas; AlGaAs-GaAs; conductance; electron-electron interactions; electrostatic confining potential; high mobility quantum well; low temperature electrical characterization; magnetic fringe fields; magnetic quantum point contacts; spin polarization effect; Contacts; Electron mobility; Gallium arsenide; Magnetic confinement; Magnetic field measurement; Magnetic fields; Magnetic flux; Magnetic materials; Magnetic separation; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on
Conference_Location :
Genoa
ISSN :
1944-9399
Print_ISBN :
978-1-4244-4832-6
Electronic_ISBN :
1944-9399
Type :
conf
Filename :
5394670
Link To Document :
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