DocumentCode :
511482
Title :
Silicon nanowire transistor with a channel width of 4 nm fabricated by atomic force microscope nanolithography
Author :
Martinez, Javier ; Martinez, Ramses Valentin ; Garcia, Ricardo
Author_Institution :
Nanofabrication Dept., Inst. of Microelectron. of Madrid, Tres Cantos, Spain
fYear :
2009
fDate :
26-30 July 2009
Firstpage :
442
Lastpage :
443
Abstract :
The emergence of an ultrasensitive sensor technology based on silicon nanowires requires both the fabrication of nanoscale diameter wires and the integration with microelectronic processes. Here we demonstrate an atomic force microscopy lithography that enables the reproducible fabrication of complex single-crystalline silicon nanowire field-effect transistors with a high electrical performance. The nanowires have been carved from a silicon-on-insulator wafer by a combination of local oxidation processes with a force microscope and etching steps. We have fabricated and measured the electrical properties of a silicon nanowire transistor with a channel width of 4 nm. The flexibility of the nanofabrication process is illustrated by showing the electrical performance of two nanowire circuits with different geometries. The fabrication method is compatible with standard Si CMOS processing technologies and, therefore, can be used to develop a wide range of architectures and new microelectronic devices.
Keywords :
atomic force microscopy; elemental semiconductors; etching; field effect transistors; nanofabrication; nanolithography; nanowires; oxidation; silicon; CMOS processing technologies; Si; atomic force microscope; atomic force microscopy lithography; complex silicon nanowire field-effect transistors; electrical properties; etching; local oxidation; nanofabrication; nanolithography; silicon-on-insulator wafer; single-crystalline silicon nanowire field-effect transistors; size 4 nm; Atomic force microscopy; Atomic measurements; CMOS technology; Fabrication; Force sensors; Lithography; Microelectronics; Nanolithography; Silicon; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on
Conference_Location :
Genoa
ISSN :
1944-9399
Print_ISBN :
978-1-4244-4832-6
Electronic_ISBN :
1944-9399
Type :
conf
Filename :
5394674
Link To Document :
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