Title :
InP quantum dot 7xxnm laser diodes
Author :
Smowton, Peter M. ; Al-Ghamdi, Mohammed ; Edwards, Gareth ; Shutts, Samuel ; Krysa, Andrey B.
Author_Institution :
Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
Abstract :
We describe the optimization of InP quantum dot material for laser applications, demonstrate some of the interesting physics that results from the nature of this material and describe initial results in promising application areas.
Keywords :
III-V semiconductors; indium compounds; nanofabrication; nanophotonics; quantum dot lasers; semiconductor growth; semiconductor quantum dots; GaAs; InP; absorption spectra; growth optimisation; growth temperature; modal gain; nm laser applications; quantum dot laser diodes; room temperature threshold current density; spontaneous emission rate spectra; wafer design; Absorption; Density measurement; Diode lasers; Extraterrestrial measurements; Indium phosphide; Laser theory; Optical materials; Quantum dot lasers; Temperature; Threshold current;
Conference_Titel :
Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on
Conference_Location :
Genoa
Print_ISBN :
978-1-4244-4832-6
Electronic_ISBN :
1944-9399
