Experimental, modeling and simulation studies of nanoscale resistance switching devices

Excellent resistance switching properties such as fast switching time (< 50 ns), high on/off ratio (> 10⁶), good retention (> 6 years) and endurance (> 10⁵) are observed in nanoscale amorphous silicon based RRAM (resistive random access memory). To successfully integrate the RRAM array, circuit models of the device characteristics and effects of device configuration such as crosstalk between cells within the array need to be elucidated. To this end, we performed experiments on the junction configuration and device modeling to predict the device behavior and 3D electric field simulation to predict the effect of the switching medium thickness in terms of crosstalk during the writing process.