Tunnel magneto-resistance effect and giant hall effect of some magnetic thin film multilayers

Author

Neamtu, Jenica ; Volmer, Marius

Author_Institution

Magn., Micro & Nanostructured Mater. Dept., Nat. Inst. for R.& D. in Electr. Eng., Bucharest, Romania

fYear

2009

fDate

26-30 July 2009

Firstpage

647

Lastpage

650

Abstract

The magneto-transport properties of ferromagnetic based multilayers are dependent on the film thickness, the surface roughness, the nature of the interlayer and pining layer used for exchange biasing. We investigate how the nature of the spacer-layer affects the magnetoresistance and Hall effect properties of the magnetic multilayers. The effective thicknesses of the oxide layers were estimated by tunnel effect measurements and compared with in situ quartz microbalance measurements.

Keywords

Hall effect; Permalloy; alumina; cobalt; copper; iron alloys; magnetic multilayers; magnetic thin films; magnetoresistance; manganese alloys; nanostructured materials; silicon; silicon compounds; Si-SiO₂-Ni₈₀Fe₂₀-Al₂O₃-Ni₈₀Fe₂₀; Si-SiO₂-Ni₈₀Fe₂₀-Al₂O₃-Ni₈₀Fe₂₀-FeMn-Ni₈₀Fe₂₀; Si-SiO₂-Ni₈₀Fe₂₀-Co-Al₂O₃-Co-Ni₈₀Fe₂₀-FeMn-Ni₈₀Fe₂₀; Si-SiO₂-Ni₈₀Fe₂₀-Co-Cu-Co-Ni₈₀Fe₂₀-FeMn-Ni₈₀Fe₂₀; ferromagnetic based multilayers; giant Hall effect; in situ quartz microbalance measurements; magnetic thin film multilayers; multilayered nanostructures; oxide layers; spacer-layer affects; tunnel magneto-resistance effect; Anisotropic magnetoresistance; Giant magnetoresistance; Hall effect; Magnetic anisotropy; Magnetic films; Magnetic multilayers; Magnetic properties; Perpendicular magnetic anisotropy; Saturation magnetization; Tunneling magnetoresistance; Hall effect; anisotropic magnetoresistance effect; microstructure; thin films; tunneling magnetoresistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on

Conference_Location

Genoa

ISSN

1944-9399

Print_ISBN

978-1-4244-4832-6

Electronic_ISBN

1944-9399

Type

conf

Filename

5394777