Title :
Three dimensional quasi-regular arrangement of ferromagnetic nanostructures within porous silicon
Author :
Granitzer, P. ; Rumpf, K. ; Albu, M. ; Plank, H. ; Poelt, P.
Author_Institution :
Inst. of Phys., Karl Franzens Univ. Graz, Graz, Austria
Abstract :
The presented hybrid material consists of a porous silicon matrix and precipitated metal nanostructures within the pores. The porous silicon is achieved by wet etching of a silicon wafer, offering straight pores grown perpendicular to the surface. Ferromagnetic metals are electrochemically deposited within the pores leading to a composite material merging the electronic properties of silicon and the magnetic behaviour of the metal precipitates. Considering the metal deposition, samples with various spatial distributions of the metal structures within the pores can be fabricated and also the geometry of the precipitates can be modified. Thus the magnetic behaviour of the samples can be tuned during the fabrication process. The physical properties of the system strongly depend on the structural features wherefore its precise investigation is of great importance.
Keywords :
electrodeposition; elemental semiconductors; etching; ferromagnetic materials; magnetic anisotropy; magnetic hysteresis; nanocomposites; nanotechnology; nickel; porous semiconductors; self-assembly; semiconductor growth; silicon; Si-Ni; electrochemical deposition; ferromagnetic metals; ferromagnetic nanostructures; hybrid material; hysteresis loops; magnetic anisotropy; magnetic behaviour; magnetization; metal structures spatial distributions; nanocomposite; porous silicon matrix; precipitated metal nanostructures; self-assembly; self-organized driven process; three dimensional quasiregular arrangement; Composite materials; Geometry; Inorganic materials; Magnetic properties; Merging; Nanocomposites; Nanostructured materials; Nanostructures; Silicon; Wet etching; component; electrodeposition; metal nanostructures; porous silicon;
Conference_Titel :
Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on
Conference_Location :
Genoa
Print_ISBN :
978-1-4244-4832-6
Electronic_ISBN :
1944-9399