Photocurrent spectroscopy of electron levels in semiconductor quantum wells

Photocurrent spectroscopy investigation of InGaP/ GaAs Multi-Quantum Wells (MQW), formed by an alternate sequence of nominally undoped 12 nm/8 nm thick InGaP/GaAs layers, is reported. The MQW, interposed between two p⁺ and n⁺ InGaP cladding layers, were grown lattice matched on n⁺-GaAs substrates through Metal Organic Vapour Phase Epitaxy by using tertiarybutyl-arsine and tertiarybutyl-phosphine as alternative precursors for the V group elements. The analysis of experimental data, taken in the temperature range 10-300 K, shows a low structural disorder and a good reliability of the grown structures, which prove an optimum control of the desired design of the grown MQW and especially the powerful features of the photocurrent spectroscopy technique.