Behavorial model of carbon nanotube programmable resistors

Hybrid Nano (e.g. Nanotube, Nanowire) /CMOS circuits combine both the advantages of Nano-devices and CMOS technologies; they have thus become one of the most promising candidates to relax the intrinsic drawbacks of CMOS circuits beyond Moore´s law. A behavioral simulation model for an hybrid Nano/CMOS design is presented in this paper. It is based on Optically Gated Carbon NanoTube Field Effect Transistors (OG-CNTFET), which can be used as 2-terminal programmable resistors. Their resistance can be adjusted precisely, reproducibly and in a non-volatile way, over three orders of magnitude. These interesting behaviors of OG-CNTFET promise great potential for developing the non-volatile memory and neuromorphic adaptive computing circuits. The model is developed in Verilog-A language and implemented on Cadence Virtuoso platform with Spectre 5.1.41 simulator. Many experimental parameters are included in this model to improve the simulation accuracy.