DocumentCode :
511593
Title :
Confinement in quantum wire periodic nanostructures
Author :
Rodriguez-Bolivar, S. ; Gómez-Campos, F.M. ; Luque-Rodríguez, A. ; López-Villanueva, J.A. ; Carceller, J.E.
Author_Institution :
Dept. de Electron. y Tecnol. de los Comput., Univ. de Granada, Granada, Spain
fYear :
2009
fDate :
26-30 July 2009
Firstpage :
707
Lastpage :
709
Abstract :
In this work we calculate the electron band structure of a silicon periodic nanostructure embedded into SiO2 and describe the computational implementation we used for this purpose. Further, we discuss the influence of nonparabolicity of electron silicon band structure in the dispersion relation of the periodic nanostructure.
Keywords :
band structure; elemental semiconductors; nanostructured materials; semiconductor quantum wires; silicon; silicon compounds; Si-SiO2; electron band structure; electron silicon band structure; nonparabolicity; quantum wire periodic nanostructures; silicon periodic nanostructure; Dispersion; Electrons; Embedded computing; Nanostructured materials; Nanostructures; Periodic structures; Potential well; Quantum dots; Silicon; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on
Conference_Location :
Genoa
ISSN :
1944-9399
Print_ISBN :
978-1-4244-4832-6
Electronic_ISBN :
1944-9399
Type :
conf
Filename :
5394852
Link To Document :
بازگشت