DocumentCode
511593
Title
Confinement in quantum wire periodic nanostructures
Author
Rodriguez-Bolivar, S. ; Gómez-Campos, F.M. ; Luque-Rodríguez, A. ; López-Villanueva, J.A. ; Carceller, J.E.
Author_Institution
Dept. de Electron. y Tecnol. de los Comput., Univ. de Granada, Granada, Spain
fYear
2009
fDate
26-30 July 2009
Firstpage
707
Lastpage
709
Abstract
In this work we calculate the electron band structure of a silicon periodic nanostructure embedded into SiO2 and describe the computational implementation we used for this purpose. Further, we discuss the influence of nonparabolicity of electron silicon band structure in the dispersion relation of the periodic nanostructure.
Keywords
band structure; elemental semiconductors; nanostructured materials; semiconductor quantum wires; silicon; silicon compounds; Si-SiO2; electron band structure; electron silicon band structure; nonparabolicity; quantum wire periodic nanostructures; silicon periodic nanostructure; Dispersion; Electrons; Embedded computing; Nanostructured materials; Nanostructures; Periodic structures; Potential well; Quantum dots; Silicon; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on
Conference_Location
Genoa
ISSN
1944-9399
Print_ISBN
978-1-4244-4832-6
Electronic_ISBN
1944-9399
Type
conf
Filename
5394852
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