DocumentCode :
511739
Title :
Requirement for accurate interconnect temperature measurement for electromigration test
Author :
Hou, Yuejin ; Tan, Cher Ming
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fYear :
2009
fDate :
14-16 Dec. 2009
Firstpage :
522
Lastpage :
525
Abstract :
In this work, we show accurate temperature measurement is important in electromigration (EM) test as it can affect the measured activation energy EA and current density exponent n. The deviation of measured EA and n due to the interconnect temperature variations are derived analytically and illustrated in Cu/low-k interconnects using finite element analysis (FEA) under typical experimental conditions. The derived formulations are verified by our previous experimental works.
Keywords :
current density; electromigration; finite element analysis; integrated circuit interconnections; temperature measurement; Cu-low-k interconnects; activation energy; current density; electromigration test; finite element analysis; integrated circuit interconnects; interconnect temperature measurement; Charge carriers; Circuits; Electromigration; Electron beams; Radiative recombination; Scanning electron microscopy; Semiconductor materials; Spontaneous emission; Temperature measurement; Testing; Activation energy; Current density exponent; Electromigration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Circuits, ISIC '09. Proceedings of the 2009 12th International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-9-8108-2468-6
Type :
conf
Filename :
5403696
Link To Document :
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