Title :
An inductor-less broadband design technique for transimpedance amplifiers
Author :
Zhenghao, Lu ; Dandan, Chen ; Seng, Yeo Kiat
Author_Institution :
Dept. of Microelectron., Soochow Univ., Suzhou, China
Abstract :
An inductor-less bandwidth enhancement technique for transimpedance amplifiers is proposed in this paper, which uses a single capacitor to realize negative capacitance, capacitive source degeneration and capacitive peaking at the same time. Based on this technique, a broadband transimpedance amplifier is designed and simulated in 0.18 ¿m RFCMOS technology. The simulation results show a bandwidth enhancement ratio of 2.5 is achieved without any inductor employed. The proposed TIA circuit is suitable for 10 Gbit/s optical communications and presents the advantages of much less chip area consumption, low-cost and easy of design comparing to inductor based designs.
Keywords :
CMOS analogue integrated circuits; operational amplifiers; radiofrequency amplifiers; radiofrequency integrated circuits; wideband amplifiers; RFCMOS technology; bandwidth enhancement ratio; broadband transimpedance amplifier; capacitive source degeneration; chip area consumption; inductor based designs; inductorless broadband design technique; negative capacitance; single capacitor; size 0.18 mum; Annealing; Broadband amplifiers; CMOS technology; Gallium arsenide; III-V semiconductor materials; Materials science and technology; Optical pulses; Pulsed laser deposition; Semiconductor diodes; Semiconductor lasers; Broadband; bandwidth enhancement; inductor-less; transimpedance amplifier;
Conference_Titel :
Integrated Circuits, ISIC '09. Proceedings of the 2009 12th International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-9-8108-2468-6
