DocumentCode :
511766
Title :
Investigating the effects of the number of stages on phase noise in CMOS ring oscillators
Author :
Zhu, Wei-Jie ; Ma, Jian-Guo
Author_Institution :
Sch. of Electron. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear :
2009
fDate :
14-16 Dec. 2009
Firstpage :
612
Lastpage :
615
Abstract :
This article focuses on effects of the number of stages on phase noise in CMOS ring oscillators for a given oscillation frequency by comparing several phase noise models. Expressions of phase noise due to white noise and flicker noise in single-ended and differential ring oscillator are described and parameters affecting the phase noise especially the number of stages and gate length are studied. After derivations and analysis, explicit design implications arising form these theories are given for low phase noise design.
Keywords :
CMOS integrated circuits; flicker noise; oscillators; phase noise; white noise; CMOS ring oscillators; differential ring oscillator; flicker noise; oscillation frequency; phase noise models; single-ended ring oscillator; white noise; 1f noise; CMOS technology; Capacitance; Frequency; Integrated circuit noise; Phase noise; Ring oscillators; Semiconductor device modeling; Semiconductor device noise; White noise; Ring oscillator; flicker noise; phase noise; the number of stages; white noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Circuits, ISIC '09. Proceedings of the 2009 12th International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-9-8108-2468-6
Type :
conf
Filename :
5403728
Link To Document :
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