• DocumentCode
    5118
  • Title

    A Technology Overview of the PowerChip Development Program

  • Author

    Araghchini, Mohammad ; Jun Chen ; Doan-Nguyen, Vicky ; Harburg, Daniel V. ; Donghyun Jin ; Jungkwun Kim ; Min Soo Kim ; Seungbum Lim ; Bin Lu ; Piedra, Daniel ; Jizheng Qiu ; Ranson, John ; Min Sun ; Xuehong Yu ; Hongseok Yun ; Allen, Mark G. ; del Alamo,

  • Author_Institution
    Massachusetts Inst. of Technol., Cambridge, MA, USA
  • Volume
    28
  • Issue
    9
  • fYear
    2013
  • fDate
    Sept. 2013
  • Firstpage
    4182
  • Lastpage
    4201
  • Abstract
    The PowerChip research program is developing technologies to radically improve the size, integration, and performance of power electronics operating at up to grid-scale voltages (e.g., up to 200V) and low-to-moderate power levels (e.g., up to 50W) and demonstrating the technologies in a high-efficiency light-emitting diode driver, as an example application. This paper presents an overview of the program and of the progress toward meeting the program goals. Key program aspects and progress in advanced nitride power devices and device reliability, integrated high-frequency magnetics and magnetic materials, and high-frequency converter architectures are summarized.
  • Keywords
    driver circuits; integrated circuit reliability; light emitting diodes; magnetic materials; power integrated circuits; PowerChip development program; PowerChip research program; device reliability; grid-scale voltage; high-efficiency light-emitting diode driver; high-frequency converter architecture; integrated high-frequency magnetics; low-to-moderate power level; magnetic material; nitride power device; power electronics; Capacitors; Inductors; Magnetics; Power electronics; Prototypes; Switches; Voltage control; Gallium nitride; PwrSoC; high frequency (HF); integrated magnetics; integrated power converter; light-emitting diode (LED) driver;
  • fLanguage
    English
  • Journal_Title
    Power Electronics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-8993
  • Type

    jour

  • DOI
    10.1109/TPEL.2013.2237791
  • Filename
    6408389