DocumentCode :
511835
Title :
A low dropout regulator for SoC with high power supply rejection and low quiescent current
Author :
Zhan, Chenchang ; Ki, Wing-Hung
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China
fYear :
2009
fDate :
14-16 Dec. 2009
Firstpage :
37
Lastpage :
40
Abstract :
A CMOS low dropout regulator (LDR) with high power supply rejection (PSR) and without large output capacitor is proposed for system-on-chip (SoC) power management applications. By cascoding a power NMOS with the PMOS pass transistor, high PSR over a wide frequency range is achieved. The gate drive of the cascode NMOS is controlled by an auxiliary LDR that draws only 1 ¿A from a small charge pump, leading to a very low quiescent current. A prototype LDR is fabricated using a standard 0.35 ¿m CMOS process, occupying an active area of 0.066 mm2. The input is 1.6 V and the output is 1.2 V with a maximum load current of 10 mA. The measured worst-case PSR at full load without using large output capacitor is -22.7dB up to 60 MHz. The line and load regulations are 0.25 mV/V and 0.32 mV/mA respectively.
Keywords :
CMOS digital integrated circuits; MOSFET; system-on-chip; CMOS low dropout regulator; PMOS pass transistor; SoC; current 1 muA; current 10 mA; high power supply rejection; large output capacitor; low quiescent current; power NMOS cascoding; size 0.35 mum; small charge pump; system-on-chip power management; voltage 1.2 V; voltage 1.6 V; worst-case PSR; Capacitors; Charge pumps; Energy management; Frequency; MOS devices; Power supplies; Power system management; Prototypes; Regulators; System-on-a-chip; LDR; Low quiescent current; PSR; power supply rejection;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Circuits, ISIC '09. Proceedings of the 2009 12th International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-9-8108-2468-6
Type :
conf
Filename :
5403907
Link To Document :
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