Title :
Ground bouncing noise aware sequential MTCMOS circuits with data retention capability
Author :
Jiao, Hailong ; Kursun, Volkan
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
Reactivation noise is an important reliability concern in standard sequential MTCMOS circuits. The ground bouncing noise, the leakage power consumption, and the data stability of various sequential MTCMOS circuits are evaluated in this paper. The attractive application space of different data retention MTCMOS circuit techniques is identified for various design metrics with a 90 nm CMOS technology.
Keywords :
CMOS logic circuits; flip-flops; integrated circuit noise; integrated circuit reliability; sequential circuits; CMOS technology; data retention; data stability; flip-flop; ground bouncing noise; leakage power consumption; reactivation noise; reliability; sequential MTCMOS circuits; size 90 nm; Active circuits; CMOS technology; Circuit noise; Circuit stability; Energy consumption; Flip-flops; Integrated circuit noise; Power engineering computing; Space technology; Voltage;
Conference_Titel :
Integrated Circuits, ISIC '09. Proceedings of the 2009 12th International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-9-8108-2468-6
