DocumentCode
512188
Title
High data rate 850 nm oxide VCSEL for 20 Gbit/s application and beyond
Author
Ji, Chen ; Wang, Jingyi ; Söderström, David ; Giovane, Laura
Author_Institution
Avago Technologies, III-V device R&D group, Fiber Optics Product Division, 350 West Trimble Rd. San Jose, CA 95131, USA
Volume
2009-Supplement
fYear
2009
fDate
2-6 Nov. 2009
Firstpage
1
Lastpage
7
Abstract
In this paper we report a 850nm oxide VCSEL operating at 20 Gbit/s (PRBS31) with a 5 dB Extinction Ratio, based on a volume manufacturing platform with MOCVD grown GaAs/AlGaAs epi-material. We present detailed time and frequency domain VCSEL characterization results, and a finite element simulation showing good agreement with experimental data.
Keywords
Apertures; Bandwidth; Costs; Finite element methods; Gallium arsenide; High speed optical techniques; MOCVD; Optical modulation; Transceivers; Vertical cavity surface emitting lasers; 20Gbit/s eye diagram; 850 nm oxide VCSEL; Vertical Cavity Surface Emitting Laser; finite element simulation; small signal modulation response;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Photonics Conference and Exhibition (ACP), 2009 Asia
Conference_Location
Shanghai, China
Print_ISBN
978-1-55752-877-3
Electronic_ISBN
978-1-55752-877-3
Type
conf
Filename
5405463
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